PESD5V0L4UW T/R NXP Semiconductors, PESD5V0L4UW T/R Datasheet - Page 14

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PESD5V0L4UW T/R

Manufacturer Part Number
PESD5V0L4UW T/R
Description
TVS Diode Arrays DIODE ARRAY ESD TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD5V0L4UW T/R

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Breakdown Voltage
6.46 V
Clamping Voltage
13 V
Operating Voltage
5 V
Peak Surge Current
2.5 A
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.3 (Max) mm W x 1.7 (Max) mm L
Package / Case
SOT-665
Peak Pulse Power Dissipation
30 W
Factory Pack Quantity
4000
Part # Aliases
PESD5V0L4UW,115
NXP Semiconductors
PESDXL4UF_G_W_4
Product data sheet
Fig 16. Reflow soldering footprint PESDxL4UW (SOT665)
Reflow soldering is the only recommended soldering method.
2.00 1.70 1.00
Low capacitance unidirectional quadruple ESD protection diode arrays
0.075
Rev. 04 — 28 February 2008
0.70
(2 )
solder lands
solder resist
0.45
(2 )
placement area
occupied area
2.45
2.10
1.20
2.20
1.60
PESDxL4UF/G/W
1.375
1.25
Dimensions in mm
0.30
0.375
0.15
(2x)
(2 )
© NXP B.V. 2008. All rights reserved.
0.40
(5 )
0.55
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