KSP10TA_Q Fairchild Semiconductor
KSP10TA_Q
Manufacturer Part Number
KSP10TA_Q
Description
Transistors Bipolar - BJT NPN Si Transistor Epitaxial
Manufacturer
Fairchild Semiconductor
Specifications of KSP10TA_Q
Product Category
Transistors Bipolar - BJT
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
30 V
Collector- Emitter Voltage Vceo Max
25 V
Emitter- Base Voltage Vebo
3 V
Collector-emitter Saturation Voltage
30 V
Gain Bandwidth Product Ft
650 MHz
Dc Collector/base Gain Hfe Min
60
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Maximum Power Dissipation
350 mW
Minimum Operating Temperature
- 55 C
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