PBSS4160DPN T/R NXP Semiconductors, PBSS4160DPN T/R Datasheet - Page 8

• Manufacturer Part Number: PBSS4160DPN T/R
• Description: Transistors Bipolar - BJT LO VCESAT(BISS)TRANS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160DPN T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 220 MHz
• Dc Collector/base Gain Hfe Min: 250 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 1 A at NPN, 0.9 A at PNP
• Maximum Power Dissipation: 700 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4160DPN,115

NXP Semiconductors
PBSS4160DPN_3
Product data sheet
Fig 5.
Fig 7.
V
h
CEsat
(V)
(1) T
(2) T
(3) T
10
10
(1) T
(2) T
(3) T
FE
800
600
400
200
−1
−2
0
1
10
10
V
TR1 (NPN): DC current gain as a function of
collector current; typical values
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
−1
−1
I
C
CE
amb
amb
amb
amb
amb
amb
/I
B
= 5 V
= 100 °C
= 25 °C
= −55 °C
= 100 °C
= 25 °C
= −55 °C
= 20
1
1
(1)
(2)
(3)
10
10
(1)
(2)
(3)
10
10
2
2
10
10
006aaa513
006aaa505
3
3
I
I
C
C
(mA)
(mA)
Rev. 03 — 11 December 2009
10
10
4
4
Fig 6.
Fig 8.
V
V
CEsat
(V)
(V)
(1) T
(2) T
(3) T
10
10
10
(1) I
(2) I
(3) I
BE
60 V, 1 A NPN/PNP low V
1.2
1.0
0.8
0.6
0.4
0.2
−1
−2
−3
1
10
10
V
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
T
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
−1
−1
C
C
C
amb
amb
amb
amb
CE
/I
/I
/I
B
B
B
= 5 V
= 100
= 50
= 10
= −55 °C
= 25 °C
= 100 °C
= 25 °C
1
1
(1)
(2)
(3)
(1)
(2)
(3)
10
10
PBSS4160DPN
10
10
2
2
CEsat
© NXP B.V. 2009. All rights reserved.
10
10
(BISS) transistor
006aaa506
006aaa514
3
3
I
I
C
C
(mA)
(mA)
10
10
4
4
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