PBSS4160DPN T/R NXP Semiconductors, PBSS4160DPN T/R Datasheet - Page 11

• Manufacturer Part Number: PBSS4160DPN T/R
• Description: Transistors Bipolar - BJT LO VCESAT(BISS)TRANS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160DPN T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 220 MHz
• Dc Collector/base Gain Hfe Min: 250 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 1 A at NPN, 0.9 A at PNP
• Maximum Power Dissipation: 700 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4160DPN,115

NXP Semiconductors
PBSS4160DPN_3
Product data sheet
Fig 17. TR2 (PNP): Base-emitter saturation voltage as
Fig 19. TR2 (PNP): Collector current as a function of
V
BEsat
(V)
(A)
I
(1) T
(2) T
(3) T
−1.1
−0.9
−0.7
−0.5
−0.3
−0.1
−2.0
C
−1.6
−1.2
−0.8
−0.4
0.0
−10
I
a function of collector current; typical values
0
T
collector-emitter voltage; typical values
C
−1
amb
amb
amb
I
amb
/I
B
B
(mA) = −35.0
= 20
= −55 °C
= 25 °C
= 100 °C
= 25 °C
−1
−1
−31.5
−28.0
−24.5
−21.0
(1)
(2)
(3)
−10
−2
−10
−3
2
−10
−4
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V
3
I
−17.5
−14.0
−10.5
−7.0
−3.5
C
CE
(mA)
(V)
Rev. 03 — 11 December 2009
−10
−5
4
Fig 18. TR2 (PNP): Collector-emitter saturation
Fig 20. TR2 (PNP): Collector-emitter saturation
R
R
CEsat
CEsat
(Ω)
(Ω)
10
(1) T
(2) T
(3) T
10
(1) I
(2) I
(3) I
60 V, 1 A NPN/PNP low V
10
10
10
10
10
10
−1
−1
−10
−10
1
1
3
2
3
2
I
resistance as a function of collector current;
typical values
T
resistance as a function of collector current;
typical values
C
C
C
C
−1
−1
amb
amb
amb
amb
/I
/I
/I
/I
B
B
B
B
= 20
= 100
= 50
= 10
= 100 °C
= 25 °C
= −55 °C
= 25 °C
−1
−1
−10
−10
PBSS4160DPN
(1)
(2)
(3)
−10
−10
2
2
CEsat
(1)
(2)
(3)
−10
−10
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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006aaa492
3
I
3
I
C
C
(mA)
(mA)
−10
−10
4
4
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