PBSS4160DPN T/R NXP Semiconductors, PBSS4160DPN T/R Datasheet - Page 3

• Manufacturer Part Number: PBSS4160DPN T/R
• Description: Transistors Bipolar - BJT LO VCESAT(BISS)TRANS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160DPN T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 220 MHz
• Dc Collector/base Gain Hfe Min: 250 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 1 A at NPN, 0.9 A at PNP
• Maximum Power Dissipation: 700 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4160DPN,115

NXP Semiconductors
PBSS4160DPN_3
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Symbol
P
Per device
P
T
T
T
Fig 1.
j
amb
stg
tot
tot
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
Device mounted on a ceramic PCB, Al
(1) Ceramic PCB, Al
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Power derating curves
Parameter
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
Limiting values
(mW)
Rev. 03 — 11 December 2009
P
tot
800
600
400
200
2
O
0
3
, standard footprint
0
…continued
(1)
(2)
(3)
40
2
O
Conditions
T
T
3
, standard footprint.
amb
amb
60 V, 1 A NPN/PNP low V
≤ 25 °C
≤ 25 °C
2
80
120
T
amb
006aaa493
PBSS4160DPN
(°C)
[1]
[2]
[3]
[1]
[2]
[3]
160
Min
-
-
-
-
-
-
-
−65
−65
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
290
370
450
420
560
700
150
+150
+150
Unit
mW
mW
mW
mW
mW
mW
°C
°C
°C
2
.
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