PBSS4160DPN T/R NXP Semiconductors, PBSS4160DPN T/R Datasheet - Page 13

• Manufacturer Part Number: PBSS4160DPN T/R
• Description: Transistors Bipolar - BJT LO VCESAT(BISS)TRANS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS4160DPN T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Collector- Base Voltage Vcbo: 80 V
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Collector-emitter Saturation Voltage: 5 V
• Gain Bandwidth Product Ft: 220 MHz
• Dc Collector/base Gain Hfe Min: 250 at 1 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSOP
• Continuous Collector Current: 1 A at NPN, 0.9 A at PNP
• Maximum Power Dissipation: 700 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000
• Part # Aliases: PBSS4160DPN,115

NXP Semiconductors
PBSS4160DPN_3
Product data sheet
Fig 23. TR2 (PNP): BISS transistor switching time definition
Fig 24. TR2 (PNP): Test circuit for switching times
90 %
10 %
90 %
10 %
− I
− I
B
C
I
C
= −0.5 A; I
oscilloscope
t
d
Bon
t
on
Rev. 03 — 11 December 2009
= −25 mA; I
V
t
I
r
(probe)
450 Ω
Boff
R1
= 25 mA; R1 = open; R2 = 100 Ω; R
R2
R
60 V, 1 A NPN/PNP low V
B
V
BB
R
C
V
CC
DUT
V
o
mgd624
− I
(probe)
PBSS4160DPN
450 Ω
Bon
t
− I
s
(100 %)
Boff
t
off
oscilloscope
B
= 300 Ω; R
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
f
C
= 20 Ω
− I
006aaa266
C
(100 %)
13 of 18
t