PBSS303NX T/R NXP Semiconductors, PBSS303NX T/R Datasheet - Page 9

• Manufacturer Part Number: PBSS303NX T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS303NX T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.1 A
• Gain Bandwidth Product Ft: 130 MHz
• Dc Collector/base Gain Hfe Min: 300 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UPAK
• Dc Current Gain Hfe Max: 300 at 0.5 A at 2 V
• Maximum Power Dissipation: 2100 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: PBSS303NX,115

NXP Semiconductors
8. Test information
PBSS303NX_2
Product data sheet
Fig 13. BISS transistor switching time definition
Fig 14. Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
C
B
V
CC
= 12.5 V; I
oscilloscope
t
d
t
on
Rev. 02 — 20 November 2009
C
= 3 A; I
V
t
I
r
(probe)
450 Ω
Bon
= 0.15 A; I
R1
R2
R
Boff
B
V
BB
= −0.15 A
30 V, 5.1 A NPN low V
R
C
V
CC
DUT
V
o
mlb826
I
Bon
(probe)
450 Ω
I
t
(100 %)
Boff
s
t
off
PBSS303NX
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
t
f
I
006aaa003
C
(100 %)
t
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