PBSS303NX T/R NXP Semiconductors, PBSS303NX T/R Datasheet - Page 7

• Manufacturer Part Number: PBSS303NX T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS303NX T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.1 A
• Gain Bandwidth Product Ft: 130 MHz
• Dc Collector/base Gain Hfe Min: 300 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UPAK
• Dc Current Gain Hfe Max: 300 at 0.5 A at 2 V
• Maximum Power Dissipation: 2100 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: PBSS303NX,115

NXP Semiconductors
PBSS303NX_2
Product data sheet
Fig 5.
Fig 7.
V
h
(V)
1000
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
BE
800
600
400
200
1.2
0.8
0.4
0
0
10
10
V
DC current gain as a function of collector
current; typical values
V
Base-emitter voltage as a function of collector
current; typical values
−1
−1
CE
amb
amb
amb
CE
amb
amb
amb
(1)
(2)
(3)
(1)
(2)
(3)
= 2 V
= 2 V
= 100 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 100 °C
1
1
10
10
10
10
2
2
10
10
006aaa580
3
006aaa581
3
I
I
C
C
(mA)
(mA)
Rev. 02 — 20 November 2009
10
10
4
4
Fig 6.
Fig 8.
V
BEsat
(A)
(V)
I
(1) T
(2) T
(3) T
C
1.2
0.8
0.4
14
12
10
8
6
4
2
0
0
10
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
30 V, 5.1 A NPN low V
−1
C
amb
amb
amb
amb
/I
(1)
(2)
(3)
B
= 20
= 25 °C
= −55 °C
= 25 °C
= 100 °C
1
1
10
2
PBSS303NX
10
3
2
CEsat
IB (mA) = 80
© NXP B.V. 2009. All rights reserved.
10
(BISS) transistor
4
006aaa586
006aaa584
3
V
I
C
CE
(mA)
(V)
72
64
56
48
40
32
24
16
8
10
5
4
7 of 15