PBSS303NX T/R NXP Semiconductors, PBSS303NX T/R Datasheet - Page 10

• Manufacturer Part Number: PBSS303NX T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS303NX T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.1 A
• Gain Bandwidth Product Ft: 130 MHz
• Dc Collector/base Gain Hfe Min: 300 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UPAK
• Dc Current Gain Hfe Max: 300 at 0.5 A at 2 V
• Maximum Power Dissipation: 2100 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: PBSS303NX,115

NXP Semiconductors
9. Package outline
10. Packing information
PBSS303NX_2
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
PBSS303NX
Fig 15. Package outline SOT89 (SC-62/TO-243)
For further information and the availability of packing methods, see
Packing methods
Package
SOT89
Rev. 02 — 20 November 2009
Dimensions in mm
2.6
2.4
0.53
0.40
Description
8 mm pitch, 12 mm tape and reel
1
1.5
4.6
4.4
1.8
1.4
3
2
30 V, 5.1 A NPN low V
3
0.48
0.35
1.2
0.8
1.6
1.4
Section
[1]
PBSS303NX
0.44
0.23
4.25
3.75
06-08-29
15.
CEsat
Packing quantity
1000
-115
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
4000
-135
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