PBSS303NX T/R NXP Semiconductors, PBSS303NX T/R Datasheet - Page 13

• Manufacturer Part Number: PBSS303NX T/R
• Description: Transistors Bipolar - BJT TRANS BISS TAPE-7
• Manufacturer: NXP Semiconductors

Specifications of PBSS303NX T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 30 V
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 5.1 A
• Gain Bandwidth Product Ft: 130 MHz
• Dc Collector/base Gain Hfe Min: 300 at 0.5 A at 2 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: UPAK
• Dc Current Gain Hfe Max: 300 at 0.5 A at 2 V
• Maximum Power Dissipation: 2100 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 1000
• Part # Aliases: PBSS303NX,115

NXP Semiconductors
13. Revision history
Table 9.
PBSS303NX_2
Product data sheet
Document ID
PBSS303NX_2
Modifications:
PBSS303NX_1
Revision history
Release date
20091120
20060823
•
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 15 “Package outline SOT89
Figure 16 “Reflow soldering footprint SOT89
Figure 17 “Wave soldering footprint SOT89
Rev. 02 — 20 November 2009
Data sheet status
Product data sheet
Product data sheet
(SC-62/TO-243)”: updated
30 V, 5.1 A NPN low V
Change notice
-
-
(SC-62)”: updated
(SC-62)”: updated
PBSS303NX
Supersedes
PBSS303NX_1
-
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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