KSC2330OSHTA Fairchild Semiconductor, KSC2330OSHTA Datasheet - Page 2

• Manufacturer Part Number: KSC2330OSHTA
• Description: Transistors Bipolar - BJT NPN Si Transistor Epitaxial
• Manufacturer: Fairchild Semiconductor

Specifications of KSC2330OSHTA

• Product Category: Transistors Bipolar - BJT
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 300 V
• Collector- Emitter Voltage Vceo Max: 300 V
• Emitter- Base Voltage Vebo: 7 V
• Collector-emitter Saturation Voltage: 300 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 50 MHz
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92L
• Dc Current Gain Hfe Max: 240
• Maximum Power Dissipation: 1 W
• Minimum Operating Temperature: - 55 C

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 3. Base-Emitter Saturation Voltage
0.01
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
20
16
12
10
8
4
0
1
0
0
Collector-Emitter Saturation Voltage
1
Figure 1. Static Characteristic
V
V
25
CE
Figure 5. Power Derating
BE
20
V
(sat)
(sat)
CE
I
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[mA], COLLECTOR CURRENT
a
[
50
o
C], AMIBIENT TEMPERATURE
40
10
75
60
100
80
125
100
I
I
I
I
I
I
B
B
B
B
B
B
I
C
= 120 A
= 100 A
= 80 A
= 60 A
= 40 A
= 20 A
100
= 10 I
150
B
120
175
1000
100
100
0.1
10
10
1
Figure 4. Collector Output Capacitance
1
1
1
Figure 2. DC current Gain
V
CB
[V], COLLECTOR BASE VOLTAGE
I
C
[mA], COLLECTOR CURRENT
10
10
100
V
f = 1MHz
I
E
CE
= 0
= 10V
Rev. A2, September 2002
100