IS42S32200C1-6TL ISSI, Integrated Silicon Solution Inc, IS42S32200C1-6TL Datasheet - Page 5

• Manufacturer Part Number: IS42S32200C1-6TL
• Description: IC SDRAM 64MBIT 166MHZ 86TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS42S32200C1-6TL

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 64M (2Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3.15 V ~ 3.45 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 86-TSOPII
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS42S32200C1
PIN FUNCTIONS
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. B
1/18/07
DQM0
BA0, BA1
Symbol
A0-A10
DQ0 to
DQM3
GND
DQ31
CAS
CKE
V
GND
CLK
RAS
V
CS
WE
DDQ
DD
Q
74,76,77,79,80,82,83,85
45,47,48,50,51,53,54,56
31,33,34,36,37,39,40,42
6,12,32,38,46,52,78,84
3,9,35,41,49,55,75,81
2, 4, 5, 7, 8, 10,11,13
Pin No. (TSOP)
16,28,59,71
44,58,72,86
1,15,29,43
25 to 27
60 to 66
22,23
24
19
17
18
67
68
20
Supply Pin
Supply Pin
Supply Pin
Supply Pin
Input Pin
Input Pin
Input Pin
Input Pin
Input Pin
Input Pin
Input Pin
Input Pin
Input Pin
DQ Pin
Type
Function (In Detail)
Address Inputs: A0-A10 are sampled during the ACTIVE
command (row-address A0-A10) and READ/WRITE command (A0-A7
with A10 defining auto precharge) to select one location out of the memory array
in the respective bank. A10 is sampled during a PRECHARGE command to
determine if all banks are to be precharged (A10 HIGH) or bank selected by
BA0, BA1 (LOW). The address inputs also provide the op-code during a LOAD
MODE REGISTER command.
Bank Select Address: BA0 and BA1 defines which bank the ACTIVE, READ,
WRITE or PRECHARGE command is being applied.
CAS, in conjunction with the RAS and WE, forms the device command. See the
"Command Truth Table" for details on device commands.
The CKE input determines whether the CLK input is enabled. The next rising edge
of the CLK signal will be valid when is CKE HIGH and invalid when LOW. When
CKE is LOW, the device will be in either power-down mode, clock suspend mode,
or self refresh mode. CKE is an asynchronous input.
CLK is the master clock input for this device. Except for CKE, all inputs to this
device are acquired in synchronization with the rising edge of this pin.
The CS input determines whether command input is enabled within the device.
Command input is enabled when CS is LOW, and disabled with CS is HIGH. The
device remains in the previous state when CS is HIGH.
DQ0 to DQ15 are DQ pins. DQ through these pins can be controlled in byte units
using the DQM0-DQM3 pins
DQMx control thel ower and upper bytes of the DQ buffers. In read mode,
the output buffers are place in a High-Z state. During a WRITE cycle the input data is
masked. When DQMx is sampled HIGH and is an input mask signal for write accesses
and an output enable signal for read accesses. DQ0 through DQ7 are controlled by
DQM0. DQ8 throughDQ15 are controlled by DQM1. DQ16 through DQ23 are
controlled by DQM2. DQ24 through DQ31 are controlled by DQM3.
RAS, in conjunction with CAS and WE, forms the device command. See the "Command
Truth Table" item for details on device commands.
WE, in conjunction with RAS and CAS, forms the device command. See the "Command
Truth Table" item for details on device commands.
V
V
GND
GND is the device internal ground.
DDQ
DD
is the device internal power supply.
Q
is the output buffer power supply.
is the output buffer ground.
1-800-379-4774
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