J175_Q Fairchild Semiconductor, J175_Q Datasheet - Page 4

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J175_Q

Manufacturer Part Number
J175_Q
Description
JFET P-Channel Switch
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of J175_Q

Transistor Polarity
P-Channel
Drain Source Voltage Vds
- 30 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
- 60 mA
Configuration
Single
Mounting Style
Through Hole
Package / Case
TO-92
Power Dissipation
350 mW
Resistance Drain-source Rds (on)
125 Ohms
Typical Characteristics
100
50
10
5
1
0.01
V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
Noise Voltage vs Frequency
DG
I
= 0.2f @ f
D
= - 15V
= 5.0 mA
0.1
f - FREQUENCY (kHz)
1.0 kHz
I
D
= - 0.2 mA
1
350
300
250
200
150
100
50
0
0
(continued)
10
25
Ambient Temperature
Power Dissipation vs
SOT-23
100
TEMPERATURE ( C)
50
TO-92
75
1000
500
100
100
50
10
o
V
V
V
-50
GS(off)
GS(off)
125
GS(off)
T
Channel Resistance
A
vs Temperature
= 2.5V
= 4.5V
- AMBIENT TEMPERATURE ( C)
= 8.0V
150
0
P-Channel Switch
50
100
V
V
DS
GS
= -100 mV
= 0
o
(continued)
150

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