BTA312-600B/DG,127 NXP Semiconductors, BTA312-600B/DG,127 Datasheet - Page 6

• Manufacturer Part Number: BTA312-600B/DG,127
• Description: Triacs 600 V 12 A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BTA312-600B/DG,127

• Rohs: yes
• On-state Rms Current (it Rms): 12 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 600 V
• Holding Current (ih Max): 60 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Factory Pack Quantity: 50

NXP Semiconductors
BTA312-600B
Product data sheet
Symbol
Fig. 7.
Dynamic characteristics
dV
dI
I
com
GT(25°C)
D
/dt
I
GT
/dt
3
2
1
0
-50
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
Normalized gate trigger current as a function of
junction temperature
(1)
(2)
(3)
Parameter
rate of rise of off-state
voltage
rate of change of
commutating current
0
50
100
Conditions
All information provided in this document is subject to legal disclaimers.
V
of V
open circuit
V
dV
condition); gate open circuit
003aag894
T
DM
D
j
com
(°C)
= 400 V; T
DRM
= 402 V; T
/dt = 20 V/µs; (snubberless
150
); exponential waveform; gate
4 October 2012
j
= 125 °C; I
j
= 125 °C; (V
Fig. 8.
I
L(25°C)
I
T(RMS)
L
DM
3
2
1
0
-50
Normalized latching current as a function of
junction temperature
= 67%
= 12 A;
0
Min
1000
30
50
BTA312-600B
Typ
2000
-
100
© NXP B.V. 2012. All rights reserved
3Q Hi-Com Triac
003aag895
T
j
(°C)
Max
-
-
150
Unit
V/µs
A/ms
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