BTA312-600B/DG,127 NXP Semiconductors, BTA312-600B/DG,127 Datasheet - Page 4

• Manufacturer Part Number: BTA312-600B/DG,127
• Description: Triacs 600 V 12 A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BTA312-600B/DG,127

• Rohs: yes
• On-state Rms Current (it Rms): 12 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 600 V
• Holding Current (ih Max): 60 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Factory Pack Quantity: 50

NXP Semiconductors
5. Thermal characteristics
Table 5.
BTA312-600B
Product data sheet
Fig. 4.
Fig. 5.
Symbol
R
R
th(j-mb)
th(j-a)
I
(A)
TSM
120
100
I
80
60
40
20
(A)
TSM
0
10
10
t
(1) dI
Non-repetitive peak on-state current as a function of pulse duration; maximum values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
10
p
1
3
2
10
≤ 20 ms
Thermal characteristics
-5
T
/dt limit
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
(1)
10
-4
Conditions
All information provided in this document is subject to legal disclaimers.
full cycle;
half cycle;
in free air
10
Fig. 6
Fig. 6
4 October 2012
10
-3
10
2
10
-2
number of cycles (n)
Min
-
-
-
I
T
I
T
T
j(init)
T
BTA312-600B
j(init)
Typ
-
-
60
1/f
= 25 °C max
= 25 °C max
t
p
© NXP B.V. 2012. All rights reserved
t
3Q Hi-Com Triac
p
003aab809
(s)
003aab806
I
TSM
Max
1.5
2
-
I
TSM
t
t
10
10
3
-1
Unit
K/W
K/W
K/W
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