BTA312-600B/DG,127 NXP Semiconductors, BTA312-600B/DG,127 Datasheet - Page 2

• Manufacturer Part Number: BTA312-600B/DG,127
• Description: Triacs 600 V 12 A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BTA312-600B/DG,127

• Rohs: yes
• On-state Rms Current (it Rms): 12 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 600 V
• Holding Current (ih Max): 60 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Factory Pack Quantity: 50

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BTA312-600B
Product data sheet
Symbol
Pin
Type number
Symbol
1
2
3
mb
BTA312-600B
BTA312-600B/DG
V
I
I
T(RMS)
TSM
DRM
Symbol Description
T1
T2
G
T2
Pinning information
Ordering information
Limiting values
Parameter
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
Package
Name
TO-220AB
TO-220AB
Conditions
Description
All information provided in this document is subject to legal disclaimers.
V
T
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
j
D
= 25 °C;
= 12 V; I
Conditions
full sine wave; T
Fig.
full sine wave; T
t
full sine wave; T
t
p
p
Simplified outline
= 20 ms;
= 16.7 ms
Fig. 7
T
4 October 2012
2;
= 0.1 A; T2- G-;
TO-220AB (SOT78)
Fig. 3
Fig.
1 2
mb
4;
mb
j(init)
j(init)
Fig. 5
3
≤ 100 °C;
= 25 °C;
= 25 °C;
Fig.
Graphic symbol
1;
Min
2
T2
sym051
BTA312-600B
Typ
Min
-
-
-
-
-
© NXP B.V. 2012. All rights reserved
3Q Hi-Com Triac
T1
G
Max
Version
Max
50
SOT78
SOT78
600
12
100
110
Unit
Unit
mA
V
A
A
A
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