BTA312-600B/DG,127 NXP Semiconductors, BTA312-600B/DG,127 Datasheet - Page 3

• Manufacturer Part Number: BTA312-600B/DG,127
• Description: Triacs 600 V 12 A TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BTA312-600B/DG,127

• Rohs: yes
• On-state Rms Current (it Rms): 12 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 600 V
• Holding Current (ih Max): 60 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Mounting Style: Through Hole
• Package / Case: TO-220AB-3
• Factory Pack Quantity: 50

NXP Semiconductors
BTA312-600B
Product data sheet
Symbol
Fig. 1.
Fig. 3.
I
dI
I
P
P
T
T
2
GM
stg
j
t
GM
G(AV)
T
/dt
(W)
P
I
tot
T(RMS )
16
12
(A)
8
4
0
RMS on-state current as a function of mounting
base temperature; maximum values
α = conduction angle
Total power dissipation as a function of RMS on-state current; maximum values
15
10
0
5
0
-50
conduction
(degrees)
Parameter
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
angle
2
120
180
t for fusing
30
60
90
0
factor
form
1.57
2.8
2.2
1.9
a
4
50
3
α
100
All information provided in this document is subject to legal disclaimers.
003a a b686
T
mb
(°C)
Conditions
t
I
p
T
150
over any 20 ms period
= 10 ms; SIN
= 20 A; I
4 October 2012
G
6
Fig. 2.
= 0.2 A; dI
I
T(RMS )
(A)
50
40
30
20
10
0
10
f = 50 Hz; T
RMS on-state current as a function of surge
duration; maximum values
-2
G
/dt = 0.2 A/µs
mb
10
= 100 °C
-1
9
α = 180°
I
T(RMS)
BTA312-600B
1
s urge duration (s )
Min
120°
-
-
-
-
-
-40
-
90°
60°
30°
(A)
© NXP B.V. 2012. All rights reserved
003a a b687
3Q Hi-Com Triac
003aab690
Max
50
100
2
5
0.5
150
125
10
12
Unit
A
A/µs
A
W
W
°C
°C
2
3 / 11
s