MT48H4M16LFB4-8:H Micron Technology Inc, MT48H4M16LFB4-8:H Datasheet - Page 46

• Manufacturer Part Number: MT48H4M16LFB4-8:H
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-8:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 33:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
A0–A9, A11
Command
Precharge all
BA0, BA1
active banks
DQM
CKE
CLK
A10
DQ
Power-Down Mode
High-Z
t CMS
t CKS
t AS
PRECHARGE
Single bank
All banks
Banks\S)
Notes:
T0
t CMH
t CKH
t AH
Two clock cycles
1. Violating refresh requirements during power-down may result in a loss of data.
All banks idle, enter
power-down mode
t CK
T1
NOP
t CKS
t CL
T2
NOP
Input buffers gated off while in
power-down mode
t CH
46
Exit power-down mode
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
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64Mb: 4 Meg x 16 Mobile SDRAM
t CKS
Tn + 1
NOP
©2006 Micron Technology, Inc. All rights reserved.
All banks idle
Timing Diagrams
Tn + 2
ACTIVE
Row
Row
Bank
Don’t Care