MT48H4M16LFB4-8:H Micron Technology Inc, MT48H4M16LFB4-8:H Datasheet - Page 44

• Manufacturer Part Number: MT48H4M16LFB4-8:H
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-8:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
23. The clock frequency must remain constant (stable clock is defined as a signal cycling
24. For auto precharge mode, at least one clock cycle is required during
25. Measurement is taken 500ms after entering this operating mode to allow for tester
26. CKE is HIGH during REFRESH command period
27. Deep power-down current is a nominal value at 25°C. The parameter is not tested.
28. Values for I
within timing constraints specified for the clock pin) during access or precharge
states (READ, WRITE, including
used to reduce the data rate.
precharge mode, the precharge timing budget (
for -8, after the first clock delay after the last WRITE is executed.
measurement settling time.
I
values are estimated.
DD
6 limit is actually a nominal value and does not result in a fail value.
DD
7 85°C are guaranteed for the entire temperature range. All other I
44
t
WR, and PRECHARGE commands). CKE may be
Micron Technology, Inc., reserves the right to change products or specifications without notice.
64Mb: 4 Meg x 16 Mobile SDRAM
t
RP) begins at 7.5ns for -75, and 7ns
t
RFC (MIN) else CKE is LOW. The
©2006 Micron Technology, Inc. All rights reserved.
t
WR. During auto
Notes
DD
7