MT48H4M16LFB4-8:H Micron Technology Inc, MT48H4M16LFB4-8:H Datasheet - Page 45

• Manufacturer Part Number: MT48H4M16LFB4-8:H
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-8:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Timing Diagrams
Figure 32:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
Command
A0–A9, A11
BA0, BA1
DQM
A10
CLK
CKE
DQ
1
Initialize and Load Mode Register
Power-up:
V
CLK stable
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Notes:
T = 100µs
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CMS
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CKS
NOP
T0
1. PRE = PRECHARGE command, AR = AUTO REFRESH command, and LMR = LOAD MODE REG-
2. Only NOPs or COMMAND INHIBITs may be issued during
3. At least one NOP or COMMAND INHIBIT is required during
t
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High-Z
CKH
CMH
ISTER command.
t
CK
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Precharge
All Banks
AS
all banks
PRE
T1
t AH
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Tn + 1
AR
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2
To + 1
AR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
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64Mb: 4 Meg x 16 Mobile SDRAM
2
t AS t AH
t
Load mode
AS
BA0 = L,
BA1 = L
Tp + 1
Code
register
LMR
Code
t
AH
t
MRD
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RFC time.
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Load extended
mode register
t
3
MRD time.
BA0 = L,
BA1 = H
BA0 = L,
BA1 = L
Code
Code
Tq + 1
LMR
©2006 Micron Technology, Inc. All rights reserved.
Timing Diagrams
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3
VALID
Tr + 1
Valid
Valid
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