MT48H4M16LFB4-8:H Micron Technology Inc, MT48H4M16LFB4-8:H Datasheet - Page 27

• Manufacturer Part Number: MT48H4M16LFB4-8:H
• Description: IC SDRAM 64MBIT 125MHZ 54VFBGA
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48H4M16LFB4-8:H

• Format - Memory: RAM
• Memory Type: Mobile SDRAM
• Memory Size: 64M (4M x 16)
• Speed: 125MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 54-VFBGA
• Organization: 4Mx16
• Density: 64Mb
• Address Bus: 14b
• Access Time (max): 8/6ns
• Maximum Clock Rate: 125MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 50mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 21:
Figure 22:
PDF: 09005aef8237ed98/Source: 09005aef8237ed68
64mb_x16_Mobile SDRAM_Y24L_2.fm - Rev. C 10/07 EN
WRITE-to-PRECHARGE
Terminating a WRITE Burst
Note:
Note:
t WR @ t CLK ≥ 15ns
t WR = t CLK < 15ns
Command
Command
Command
Address
Address
Address
DQM could remain LOW in this example if the WRITE burst is a fixed length of two.
DQM is LOW.
DQM
DQM
CLK
DQ
DQ
CLK
DQ
Transitioning Data
Bank a ,
Bank a ,
WRITE
WRITE
Col n
Col n
D
D
T0
n
n
IN
IN
WRITE
Bank,
Col n
D
T0
n
IN
n + 1
n + 1
NOP
NOP
T1
D
D
IN
IN
TERMINATE
BURST
t
WR
T1
PRECHARGE
( a or all)
Bank
NOP
T2
27
t
COMMAND
WR
Don’t Care
(Address)
(Data)
Transitioning Data
PRECHARGE
T2
NEXT
( a or all)
Bank
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t RP
64Mb: 4 Meg x 16 Mobile SDRAM
NOP
NOP
T4
t RP
Bank a ,
ACTIVE
Row
NOP
T5
Don’t Care
Bank a ,
ACTIVE
Row
NOP
T6
©2006 Micron Technology, Inc. All rights reserved.
Operations