FDN304PZ_Q Fairchild Semiconductor, FDN304PZ_Q Datasheet - Page 5
FDN304PZ_Q
Manufacturer Part Number
FDN304PZ_Q
Description
MOSFET P-Ch PowerTrench Specified 1.8V
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDN304PZ_Q.pdf
(5 pages)
Specifications of FDN304PZ_Q
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 2.4 A
Resistance Drain-source Rds (on)
0.052 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SSOT-3
Fall Time
15 ns
Forward Transconductance Gfs (max / Min)
12 S
Minimum Operating Temperature
- 55 C
Power Dissipation
0.5 W
Rise Time
15 ns
Typical Turn-off Delay Time
40 ns
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Rev. I2