SI5441DC-T1 Vishay/Siliconix, SI5441DC-T1 Datasheet - Page 5

• Manufacturer Part Number: SI5441DC-T1
• Description: MOSFET 20V 5.3A 2.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI5441DC-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.9 A
• Resistance Drain-source Rds (on): 55 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: 1206-8 ChipFET
• Fall Time: 35 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 35 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 65 ns

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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
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or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
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The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
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Document Number: 91000
www.vishay.com
Revision: 08-Apr-05
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