SI5441DC-T1 Vishay/Siliconix, SI5441DC-T1 Datasheet - Page 4

• Manufacturer Part Number: SI5441DC-T1
• Description: MOSFET 20V 5.3A 2.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI5441DC-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.9 A
• Resistance Drain-source Rds (on): 55 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: 1206-8 ChipFET
• Fall Time: 35 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 35 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 65 ns

Si5441DC
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations.
http://www.vishay.com/ppg?71055.
www.vishay.com
4
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
−0.2
0.6
0.4
0.2
0.0
0.01
0.01
0.1
0.1
−50
2
1
2
1
10
10
−4
−4
−25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
− Temperature (_C)
25
10
−3
50
10
Single Pulse
I
−3
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
−2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
For related documents such as package/tape drawings, part marking, and reliability data, see
−2
10
−1
10
1
50
40
30
20
10
−1
0
10
−3
10
−2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
Single Pulse Power
JM
10
−1
− T
Time (sec)
t
1
A
1
= P
t
2
DM
1
Z
thJA
thJA
100
S-50366—Rev. C, 28-Feb-05
t
t
1
2
(t)
Document Number: 71055
= 80_C/W
10
100
600
10
600