SI5441DC-T1 Vishay/Siliconix, SI5441DC-T1 Datasheet - Page 3

• Manufacturer Part Number: SI5441DC-T1
• Description: MOSFET 20V 5.3A 2.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI5441DC-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.9 A
• Resistance Drain-source Rds (on): 55 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: 1206-8 ChipFET
• Fall Time: 35 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 35 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 65 ns

Document Number: 71055
S-50366—Rev. C, 28-Feb-05
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.15
0.10
0.05
0.00
20
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 3.9 A
0.2
On-Resistance vs. Drain Current
= 10 V
4
V
SD
Q
3
g
V
− Source-to-Drain Voltage (V)
I
0.4
− Total Gate Charge (nC)
GS
D
− Drain Current (A)
Gate Charge
= 2.5 V
8
T
0.6
6
J
= 150_C
12
0.8
V
V
9
T
GS
GS
16
J
= 25_C
1.0
= 3.6 V
= 4.5 V
1.2
20
12
1800
1500
1200
0.20
0.15
0.10
0.05
0.00
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
C
On-Resistance vs. Junction Temperature
V
I
rss
−25
D
GS
= 3.9 A
C
= 4.5 V
1
iss
4
T
V
V
0
C
J
GS
DS
− Junction Temperature (_C)
oss
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
25
Capacitance
2
8
Vishay Siliconix
50
I
D
= 3.9 A
12
3
75
Si5441DC
100
16
www.vishay.com
4
125
150
20
5
3