SI5441DC-T1 Vishay/Siliconix, SI5441DC-T1 Datasheet
SI5441DC-T1
Specifications of SI5441DC-T1
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SI5441DC-T1 Summary of contents
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... 1206-8 ChipFET Bottom View Ordering Information: Si5441DC Si5441DC-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current a Continuous Source Current ...
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... Si5441DC Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
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... Source-to-Drain Voltage (V) SD Document Number: 71055 S-50366—Rev. C, 28-Feb-05 1800 1500 1200 25_C J 0.8 1.0 1.2 Si5441DC Vishay Siliconix Capacitance C iss 900 600 C oss 300 C rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si5441DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 0 250 mA D 0.2 0.0 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...