FQS4900TF_Q Fairchild Semiconductor
FQS4900TF_Q
Manufacturer Part Number
FQS4900TF_Q
Description
MOSFET N-Ch 60V/ P-Ch 300V Dual QFET
Manufacturer
Fairchild Semiconductor
Specifications of FQS4900TF_Q
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
+ 60 V / - 300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.3 A, - 0.3 A
Resistance Drain-source Rds (on)
0.39, 11.2 Ohms
Configuration
Dual Dual Drain
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
17 ns, 47 ns
Forward Transconductance Gfs (max / Min)
1.7 S, 0.6 S
Minimum Operating Temperature
- 55 C
Power Dissipation
2 W
Rise Time
21 ns, 25 ns
Typical Turn-off Delay Time
11 ns, 35 ns
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