SI1302DL-T1 Vishay/Siliconix, SI1302DL-T1 Datasheet - Page 5
SI1302DL-T1
Manufacturer Part Number
SI1302DL-T1
Description
MOSFET 30V 0.64A
Manufacturer
Vishay/Siliconix
Datasheet
1.SI1302DL-T1.pdf
(9 pages)
Specifications of SI1302DL-T1
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.6 A
Resistance Drain-source Rds (on)
0.48 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-70-3
Fall Time
8 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
310 mW
Rise Time
8 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
8 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1302DL-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1302DL-T1-E3
Manufacturer:
VISHAY
Quantity:
18 400
Company:
Part Number:
SI1302DL-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
53 726
Part Number:
SI1302DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1302DL-T1-GE3
Manufacturer:
MICROCHIP
Quantity:
1 944
Part Number:
SI1302DL-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 71153
06-Jul-01
0.08
1
e
c
e
D
3
1
b
2
A
A
1
E
2
1
E
A
c
L
ECN: S-03946—Rev. C, 09-Jul-01
DWG: 5549
Dim
A
A
E
e
A
D
b
E
L
c
e
1
1
1
2
Min
0.90
0.80
0.25
0.10
1.80
1.80
1.15
1.20
0.10
–
Package Information
0.65BSC
7_Nom
Nom
2.00
2.10
1.25
1.30
0.20
–
–
–
–
–
Max
1.10
0.10
1.00
0.40
0.25
2.20
2.40
1.35
1.40
0.30
Vishay Siliconix
0.035
0.031
0.010
0.004
0.071
0.071
0.045
0.047
0.004
Min
–
0.026BSC
7_Nom
Nom
0.079
0.083
0.049
0.051
0.008
www.vishay.com
–
–
–
–
–
Max
0.043
0.004
0.039
0.016
0.010
0.087
0.094
0.053
0.055
0.012
1