SI1302DL-T1 Vishay/Siliconix, SI1302DL-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1302DL-T1
• Description: MOSFET 30V 0.64A
• Manufacturer: Vishay/Siliconix

Specifications of SI1302DL-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.6 A
• Resistance Drain-source Rds (on): 0.48 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SC-70-3
• Fall Time: 8 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 310 mW
• Rise Time: 8 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 8 ns

Si1302DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71249.
www.vishay.com
4
- 0.2
- 0.4
- 0.6
0.4
0.2
0.0
0.01
0.01
0.1
0.1
- 50
2
1
2
1
10
10
-4
-4
0.02
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0
Threshold Voltage
T
J
- Temperature (°C)
25
10
Single Pulse
-3
I
D
50
10
= 250 µA
Single Pulse
Normalized Thermal Transient Impedance, Junction-to-Ambient
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
-2
125
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
150
-2
10
-1
5
4
3
2
1
0
10
1
10
-1
-2
10
-1
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
– T
Time (s)
1
T
t
1
A
A
S10-2140-Rev. F, 20-Sep-10
= P
= 25 °C
t
2
Document Number: 71249
DM
10
Z
thJA
thJA
100
t
t
1
2
(t)
= 360 °C/W
100
600
10
600