SI1302DL-T1 Vishay/Siliconix, SI1302DL-T1 Datasheet

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SI1302DL-T1

Manufacturer Part Number
SI1302DL-T1
Description
MOSFET 30V 0.64A
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI1302DL-T1

Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.6 A
Resistance Drain-source Rds (on)
0.48 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SC-70-3
Fall Time
8 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
310 mW
Rise Time
8 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
8 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1302DL-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI1302DL-T1-E3
Manufacturer:
VISHAY
Quantity:
18 400
Part Number:
SI1302DL-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
53 726
Part Number:
SI1302DL-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI1302DL-T1-E3
Quantity:
3 000
Company:
Part Number:
SI1302DL-T1-E3
Quantity:
1 500
Part Number:
SI1302DL-T1-GE3
Manufacturer:
MICROCHIP
Quantity:
1 944
Part Number:
SI1302DL-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71249
S10-2140-Rev. F, 20-Sep-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
30
(V)
0.700 at V
0.480 at V
R
J
a
DS(on)
= 150 °C)
a
GS
GS
Ordering Information: Si1302DL-T1-E3 (Lead (Pb)-free)
G
()
S
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
a
1
2
SC-70 (3-LEADS)
a
Top View
A
I
= 25 °C, unless otherwise noted)
D
0.64
0.53
Si1302DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
Steady State
Steady State
(A)
3
t 5 s
T
T
T
T
D
A
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Marking Code
Definition
Symbol
KA
R
R
thJA
thJF
Symbol
T
XX
Part # Code
J
V
V
I
P
, T
DM
I
I
DS
GS
D
S
D
stg
®
Lot Traceability
and Date Code
Power MOSFET
Typical
355
380
285
0.64
0.51
0.26
0.31
0.20
5 s
- 55 to 150
± 20
Maximum
1.5
30
400
450
340
Vishay Siliconix
Steady State
0.60
0.48
0.23
0.28
0.18
Si1302DL
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI1302DL-T1 Summary of contents

Page 1

... I (A) • Halogen-free According to IEC 61249-2-21 D Definition 0.64 • TrenchFET 0.53 • Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) 1 Marking Code Top View Si1302DL-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted) A Symbol ° ° ° °C A ...

Page 2

... Si1302DL Vishay Siliconix SPECIFICATIONS ( °C, unless otherwise noted) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... J 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 71249 S10-2140-Rev. F, 20-Sep- 4 0.6 0.8 1.0 0.6 0.8 1 °C J 0.8 1.0 1.2 Si1302DL Vishay Siliconix iss oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 0 1.6 1 ...

Page 4

... Si1302DL Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.4 0 250 µA D 0.0 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

0. Document Number: 71153 06-Jul-01 Package Information Vishay Siliconix Dim Min Nom Max A 0.90 – 1.10 A – – 0. ...

Page 6

... INTRODUCTION This technical note discusses pin-outs, package outlines, pad patterns, evaluation board layout, and thermal performance for single-channel LITTLE FOOT power MOSFETs in the SC-70 package. These new Vishay Siliconix devices are intended for small-signal applications where a miniaturized package is needed and low levels of current (around 350 mA) need to be switched, either directly or by using a level shift configuration ...

Page 7

AN813 Vishay Siliconix THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the 3-pin SC-70 measured as junction-to-foot thermal resistance is 285_C/W typical, 340_C/W maximum. Junction-to-foot thermal resistance for the 6-pin SC70-6 is 105_C/W typical, 130_C/W maximum — ...

Page 8

RECOMMENDED MINIMUM PADS FOR SC-70: 3-Lead Return to Index Return to Index Document Number: 72601 Revision: 21-Jan-08 Application Note 826 0.025 0.022 (0.622) (0.559) 0.027 (0.686) 0.071 (1.803) Recommended Minimum Pads Dimensions in Inches/(mm) Vishay Siliconix www.vishay.com 17 ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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