NDS9407_D84Z Fairchild Semiconductor, NDS9407_D84Z Datasheet - Page 3
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NDS9407_D84Z
Manufacturer Part Number
NDS9407_D84Z
Description
MOSFET Single P-Ch MOSFET Power Trench
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDS9407_D84Z.pdf
(5 pages)
Specifications of NDS9407_D84Z
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Resistance Drain-source Rds (on)
0.15 Ohms
Configuration
Single Quad Drain Triple Source
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
2.5 W
Rise Time
11 ns
Typical Turn-off Delay Time
10 ns
Typical Characteristics
1.8
1.6
1.4
1.2
0.8
0.6
20
16
12
Figure 3. On-Resistance Variation with
1
10
8
4
0
8
6
4
2
0
Figure 1. On-Region Characteristics.
-50
0
1
Figure 5. Transfer Characteristics.
V
GS
I
D
-25
= -3A
= -10V
V
V
GS
DS
1.5
= -10V
1
= -10V
0
-V
T
-V
DS
J
GS
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
, GATE TO SOURCE VOLTAGE (V)
25
-6.0V
2
2
-4.5V
50
2.5
3
75
T
-4.0V
A
= -55
100
3
4
o
C
o
C)
125
125
-3.5V
3.5
o
C
5
150
25
-3.0V
o
C
175
4
6
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
Figure 2. On-Resistance Variation with
0.25
0.15
0.05
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
100
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.3
0.2
0.1
0.1
10
2
1
1
0
0
2
Drain Current and Gate Voltage.
V
V
GS
GS
T
=0V
=-3.0V
A
Gate-to-Source Voltage.
= 25
0.2
-V
o
SD
4
-V
C
, BODY DIODE FORWARD VOLTAGE (V)
GS
-3.5V
4
, GATE TO SOURCE VOLTAGE (V)
T
-I
T
0.4
A
D
A
= 125
-4.0V
, DRAIN CURRENT (A)
= 125
8
o
C
o
C
-4.5V
0.6
6
25
o
12
C
-6.0V
0.8
-55
o
8
C
-10V
16
I
D
NDS9407 Rev B1(W)
= -1.5A
1
10
1.2
20