NDS9407_D84Z Fairchild Semiconductor, NDS9407_D84Z Datasheet - Page 3

• Manufacturer Part Number: NDS9407_D84Z
• Description: MOSFET Single P-Ch MOSFET Power Trench
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9407_D84Z

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Resistance Drain-source Rds (on): 0.15 Ohms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 11 ns
• Typical Turn-off Delay Time: 10 ns

Typical Characteristics
1.8
1.6
1.4
1.2
0.8
0.6
20
16
12
Figure 3. On-Resistance Variation with
1
10
8
4
0
8
6
4
2
0
Figure 1. On-Region Characteristics.
-50
0
1
Figure 5. Transfer Characteristics.
V
GS
I
D
-25
= -3A
= -10V
V
V
GS
DS
1.5
= -10V
1
= -10V
0
-V
T
-V
DS
J
GS
, JUNCTION TEMPERATURE (
, DRAIN TO SOURCE VOLTAGE (V)
Temperature.
, GATE TO SOURCE VOLTAGE (V)
25
-6.0V
2
2
-4.5V
50
2.5
3
75
T
-4.0V
A
= -55
100
3
4
o
C
o
C)
125
125
-3.5V
3.5
o
C
5
150
25
-3.0V
o
C
175
4
6
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
Figure 2. On-Resistance Variation with
0.25
0.15
0.05
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
100
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.3
0.2
0.1
0.1
10
2
1
1
0
0
2
Drain Current and Gate Voltage.
V
V
GS
GS
T
=0V
=-3.0V
A
Gate-to-Source Voltage.
= 25
0.2
-V
o
SD
4
-V
C
, BODY DIODE FORWARD VOLTAGE (V)
GS
-3.5V
4
, GATE TO SOURCE VOLTAGE (V)
T
-I
T
0.4
A
D
A
= 125
-4.0V
, DRAIN CURRENT (A)
= 125
8
o
C
o
C
-4.5V
0.6
6
25
o
12
C
-6.0V
0.8
-55
o
8
C
-10V
16
I
D
NDS9407 Rev B1(W)
= -1.5A
1
10
1.2
20