BUK9606-75B /T3 NXP Semiconductors, BUK9606-75B /T3 Datasheet - Page 8

• Manufacturer Part Number: BUK9606-75B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-75B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 116 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 144 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 273 ns
• Part # Aliases: BUK9606-75B,118

NXP Semiconductors
BUK9606-75B
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
gate charge; typical values
0
20
V
DD
= 14 V
40
60
(A)
I
S
100
80
60
40
20
V
0
0.0
DD
80
All information provided in this document is subject to legal disclaimers.
= 60 V
Q
G
03ng80
(nC)
0.2
100
Rev. 4 — 20 July 2011
T
j
0.4
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
(pF)
0.6
C
14000
12000
10000
8000
6000
4000
2000
0
10
as a function of drain-source voltage; typical
values
T
0.8
−1
j
= 25 °C
V
SD
03ng79
C
C
C
(V)
N-channel TrenchMOS logic level FET
iss
oss
rss
1.0
1
BUK9606-75B
10
V
© NXP B.V. 2011. All rights reserved.
DS
(V)
03ng86
10
2
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