BUK9606-75B /T3 NXP Semiconductors, BUK9606-75B /T3 Datasheet - Page 5

• Manufacturer Part Number: BUK9606-75B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-75B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 116 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 144 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 273 ns
• Part # Aliases: BUK9606-75B,118

NXP Semiconductors
6. Characteristics
Table 6.
BUK9606-75B
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
D
S
(BR)DSS
GS(th)
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
V
see
V
V
see
I
T
V
T
V
R
from drain lead 6 mm from package to
centre of die; T
from upper edge of drain mounting base
to centre of die; T
from source lead to source bond pad;
T
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
j
j
j
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
G(ext)
= 25 °C; see
= 25 °C; see
= 25 °C
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
Figure 10
Figure 10
Figure 10
Figure
Figure
= 75 V; V
= 75 V; V
= 30 V; R
= 15 V; V
= -15 V; V
= 4.5 V; I
= 5 V; I
= 10 V; I
= 5 V; I
= 0 V; V
= 10 Ω; T
Rev. 4 — 20 July 2011
11; see
11; see
D
D
DS
DS
DS
DS
DS
D
D
= 25 A; T
= 25 A; T
GS
GS
DS
L
DS
= 25 A; T
= 60 V; V
j
= V
= V
= V
= 25 A; T
Figure 13
Figure 14
= 1.2 Ω; V
GS
GS
= 25 V; f = 1 MHz;
= 25 °C
j
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
j
= 0 V; T
= 0 V; T
= 25 °C
GS
GS
GS
Figure 12
Figure 12
; T
; T
; T
j
j
= 175 °C;
= 25 °C;
j
j
j
j
GS
j
j
j
j
= 25 °C;
= 175 °C;
= -55 °C;
= 25 °C
j
= 25 °C
GS
= 175 °C
= 25 °C
= 25 °C
= 25 °C
j
j
= 5 V;
= 25 °C
= -55 °C
= 5 V;
N-channel TrenchMOS logic level FET
BUK9606-75B
Min
75
70
1.1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
-
0.02
2
2
-
-
4.7
5.2
95
17
37
8770
842
336
68
144
273
116
4.5
2.5
7.5
© NXP B.V. 2011. All rights reserved.
1010
-
Max
-
-
2
-
2.3
500
1
100
100
6.6
12.8
5.5
6.1
-
-
-
11693 pF
460
-
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
ns
ns
ns
ns
nH
nH
nH
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