BUK9606-75B /T3 NXP Semiconductors, BUK9606-75B /T3 Datasheet - Page 4

• Manufacturer Part Number: BUK9606-75B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-75B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 116 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 144 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 273 ns
• Part # Aliases: BUK9606-75B,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9606-75B
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
(A)
I
D
10
10
10
10
-1
3
2
1
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
Limit R
10
−6
δ = 0.5
0.2
0.1
0.05
0.02
single shot
DSon
= V
1
DS
10
/ I
−5
D
All information provided in this document is subject to legal disclaimers.
10
Conditions
see
mounted on a printed circuit
board; minimum footprint
−4
Rev. 4 — 20 July 2011
Figure 4
10
10
DC
−3
10
−2
N-channel TrenchMOS logic level FET
P
t
10
p
10
−1
T
2
1 ms
10 ms
100 ms
100 μ s
t
p
=10 μ s
t
BUK9606-75B
p
Min
-
-
δ =
(s)
03ng88
t
T
t
p
1
V
Typ
-
50
DS
(V)
© NXP B.V. 2011. All rights reserved.
03ng87
Max
0.5
-
10
3
Unit
K/W
K/W
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