BUK9606-75B /T3 NXP Semiconductors, BUK9606-75B /T3 Datasheet - Page 10

• Manufacturer Part Number: BUK9606-75B /T3
• Description: MOSFET HIGH PERF TRENCHMOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9606-75B /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 153 A
• Resistance Drain-source Rds (on): 0.0055 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Fall Time: 116 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 144 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 273 ns
• Part # Aliases: BUK9606-75B,118

NXP Semiconductors
8. Revision history
Table 7.
BUK9606-75B
Product data sheet
Document ID
BUK9606-75B v.4
Modifications:
BUK9606-75B v.3
Revision history
Release date
20110720
20110207
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 4 — 20 July 2011
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9606-75B
Supersedes
BUK9606-75B v.3
BUK95_9606_75B v.2
© NXP B.V. 2011. All rights reserved.
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