IRFM110ATF Fairchild Semiconductor, IRFM110ATF Datasheet

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IRFM110ATF

Manufacturer Part Number
IRFM110ATF
Description
MOSFET 100V Single
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRFM110ATF

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.5 A
Resistance Drain-source Rds (on)
0.4 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-223
Fall Time
18 ns
Forward Transconductance Gfs (max / Min)
13 S
Minimum Operating Temperature
- 55 C
Power Dissipation
2 W
Rise Time
14 ns
Factory Pack Quantity
4000
Typical Turn-off Delay Time
28 ns
©1999 Fairchild Semiconductor Corporation
*
Advanced Power MOSFET
FEATURES
Absolute Maximum Ratings
Thermal Resistance
When mounted on the minimum pad size recommended (PCB Mount).
T
Symbol
Symbol
Improved Gate Charge
Extended Safe Operating Area
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Lower Leakage Current : 10 A (Max.) @ V
Lower R
J
dv/dt
R
V
V
E
E
, T
I
I
P
T
I
DM
AR
DSS
D
GS
AS
AR
D
L
JA
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 0.289
Junction-to-Ambient
(Typ.)
Characteristic
Characteristic
*
A
=25
A
A
=25
=70
*
C
DS
C
C
)
*
= 100V
)
)
O
O
O
O
O
1
2
1
1
3
Typ.
--
- 55 to +150
0.016
1.19
Value
+ _
300
100
1.5
1.5
0.2
6.5
12
60
BV
R
I
2
IRFM110A
1. Gate 2. Drain 3. Source
20
D
SOT-223
DS(on)
= 1.5 A
DSS
Max.
1
62
= 0.4
= 100 V
3
2
Units
Units
C/
V/ns
W/
mJ
mJ
W
V
A
V
A
A
W
C
Rev. B
C

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IRFM110ATF Summary of contents

Page 1

... T J STG Storage Temperature Range Maximum Lead Temp. for Soldering T L Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol R Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount). ©1999 Fairchild Semiconductor Corporation = 100V DS (Typ.) Characteristic = = ...

Page 2

IRFM110A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R ...

Page 3

N-CHANNEL POWER MOSFET Fig 1. Output Characteristics V GS Top : 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4 Notes : 1. 250 ...

Page 4

IRFM110A Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 0.8 -75 -50 - Junction Temperature [ J Fig 9. Max. Safe Operating Area 2 10 Operation in This Area is Limited by ...

Page 5

N-CHANNEL POWER MOSFET “ Current Regulator ” 50K 12V 200nF 300nF V GS 3mA R 1 Current Sampling (I G Resistor Fig 13. Resistive Switching Test Circuit & Waveforms V out DUT 10V Fig 14. Unclamped ...

Page 6

IRFM110A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT Driver Driver ) DUT ) DUT ) + ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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