SUM110N04-03L-E3 Vishay/Siliconix, SUM110N04-03L-E3 Datasheet - Page 5

• Manufacturer Part Number: SUM110N04-03L-E3
• Description: MOSFET 40V 110A 230W 3.5mohm @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SUM110N04-03L-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Resistance Drain-source Rds (on): 2.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 100 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.75 W
• Rise Time: 20 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 50 ns

THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
Document Number: 72081
S-62690-Rev. C, 01-Jan-07
http://www.vishay.com/ppg?72081.
120
100
0.01
80
60
40
20
0.1
0
2
1
0
10 -
0.2
0.1
Duty Cycle = 0.5
4
25
Single Pulse
T
Maximum Drain Current
0.02
C
vs. Case Temperature
50
- Ambient Temperature (°C)
0.05
75
100
10 -
Normalized Thermal Transient Impedance, Junction-to-Case
3
125
150
Square Wave Pulse Duration (sec)
175
10 -
2
1000
100
0.1
10
1
0.1
*V
Safe Operating Area, Junction-to-Case
GS
V
minimum V
DS
Single Pulse
- Drain-to-Source Voltage (V)
T
by r
*Limited
C
10 -
1
= 25 °C
SUM110N04-03L
DS(on)
1
GS
at which r
Vishay Siliconix
DS(on)
10
www.vishay.com
is specified
1 ms
10 ms
100 ms
dc
10 µs
100 µs
1
100
5