SUM110N04-05H_08 VISHAY [Vishay Siliconix], SUM110N04-05H_08 Datasheet
SUM110N04-05H_08
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SUM110N04-05H_08 Summary of contents
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... DS(on) 0.0053 TO-263 Top View Ordering Information: SUM110N04-05H-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
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... SUM110N04-05H Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... °C 125 ° rss SUM110N04-05H Vishay Siliconix 250 200 150 100 T = 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics 0.010 0.008 0.006 ...
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... SUM110N04-05H Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ( 150 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time www.vishay.com 4 100 125 ...
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... S-80274-Rev. B, 11-Feb-08 1000 100 10 1 0.1 0.01 0.001 125 150 175 0 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM110N04-05H Vishay Siliconix 10 µs 100 µs Limited DS(on) 10 ms, 100 ms °C C Single Pulse Drain-to-Source Voltage (V) ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...