SUM110N04-03L-E3 Vishay/Siliconix, SUM110N04-03L-E3 Datasheet - Page 4

• Manufacturer Part Number: SUM110N04-03L-E3
• Description: MOSFET 40V 110A 230W 3.5mohm @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SUM110N04-03L-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Resistance Drain-source Rds (on): 2.8 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 100 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.75 W
• Rise Time: 20 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 50 ns

SUM110N04-03L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1000
2.0
1.6
1.2
0.8
0.4
0.0
100
0.00001
0.1
10
- 50 - 25
Typical Single Pulse Avalanche Current vs. Time
1
On-Resistance vs. Junction Temperature
V
I
I
AV
D
GS
= 30 A
(A) at T
= 10 V
0.0001
T
0
J
- Junction Temperature (°C)
A
= 150 °C
25
0.001
50
t
in
(Sec)
75
I
AV
0.01
(A) at T
100
A
125
= 25 °C
0.1
150
175
1
100
10
50
48
46
44
42
40
1
0
- 50 - 25
Source-Drain Diode Forward Voltage
I
D
= 1 mA
T
V
T
0
J
0.3
SD
vs. Junction Temperature
J
Drain Source Breakdown
= 150 °C
- Junction Temperature (°C)
- Source-to-Drain Voltage (V)
25
50
0.6
S-62690-Rev. C, 01-Jan-07
Document Number: 72081
75
100
T
J
0.9
= 25 °C
125
150
1.2
175