SUM110N04-05H-E3 Siliconix / Vishay, SUM110N04-05H-E3 Datasheet
SUM110N04-05H-E3
Manufacturer Part Number
SUM110N04-05H-E3
Description
MOSFET, Power; N-Ch; VDSS 40V; RDS(ON) 0.0044Ohm; ID 110A; TO-263; PD 150W; VGS 20V
Manufacturer
Siliconix / Vishay
Datasheet
1.SUM110N04-05H-E3.pdf
(2 pages)
Specifications of SUM110N04-05H-E3
Application
Automotive such as high-side switch, motor drives, 12 V battery
Channel Type
N-Channel
Current, Drain
110 A
Fall Time
12 nS
Gate Charge, Total
95 nC
Mounting And Package Type
PCB Mount and TO-263
Operating And Storage Temperature
-55 to +175 °C
Package Type
TO-263
Polarization
N-Channel
Power Dissipation
150 W
Resistance, Drain To Source On
0.0044 Ohm
Resistance, Thermal, Junction To Case
1 °C⁄W
Temperature, Operating, Maximum
+175 °C
Temperature, Operating, Minimum
-55 °C
Thermal Resistance, Junction To Ambient
40 °C⁄W
Time, Rise
95 nS
Time, Turn-off Delay
50 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
50 S
Voltage, Breakdown, Drain To Source
40 V
Voltage, Forward, Diode
0.9 V
Voltage, Gate To Source
20 V
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
V
(BR)DSS
Ordering Information: SUM110N04-05H-E3 (Lead (Pb)-free)
40
(V)
0.0053 at V
G
Top View
TO-263
r
D
DS(on)
S
J
a
a
N-Channel 40-V (D-S) 175 °C MOSFET
= 175 °C)
GS
(Ω)
= 10 V
I
D
110
(A)
C
= 25 °C, unless otherwise noted
Q
g
(Typ.)
95
PCB Mount
T
T
L = 0.1 mH
T
T
C
A
C
C
= 125 °C
= 25 °C
= 25 °C
= 25 °C
FEATURES
• TrenchFET
• 175 °C Junction Temperature
• High Threshold Voltage at High Temperature
c
c
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
DM
I
AR
thJA
thJC
GS
DS
AR
D
D
®
stg
Power MOSFET
G
N-Channel MOSFET
SUM110N04-05H
- 55 to 175
Limit
Limit
D
S
150
3.75
110
300
125
40
20
70
50
40
1
b
Vishay Siliconix
°C/W
Unit
Unit
mJ
°C
W
RoHS
V
A
COMPLIANT
1
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SUM110N04-05H-E3 Summary of contents
Page 1
... DS(on) 0.0053 TO-263 Top View Ordering Information: SUM110N04-05H-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
Page 2
... SUM110N04-05H Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...