SUM110N04-03L-E3 Vishay/Siliconix, SUM110N04-03L-E3 Datasheet

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SUM110N04-03L-E3

Manufacturer Part Number
SUM110N04-03L-E3
Description
MOSFET 40V 110A 230W 3.5mohm @ 10V
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SUM110N04-03L-E3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
110 A
Resistance Drain-source Rds (on)
2.8 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263-3
Fall Time
100 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
3.75 W
Rise Time
20 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
50 ns
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72081
S-62690-Rev. C, 01-Jan-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
V
(BR)DSS
40
Ordering Information: SUM110N04-03L
(V)
G
Top View
TO-263
0.0053 at V
0.0035 at V
D
r
S
DS(on)
J
b
N-Channel 40-V (D-S) 175 °C MOSFET
= 175 °C)
SUM110N04-03L-E3 (Lead (Pb)-free)
GS
GS
(Ω)
= 4.5 V
= 10 V
C
I
= 25 °C, unless otherwise noted
T
PCB Mount
T
110
D
L = 0.1 mH
T
T
C
A
C
C
(A)
= 125 °C
= 25 °C
= 25 °C
= 25 °C
a
d
d
FEATURES
APPLICATIONS
G
• TrenchFET
• 175 °C Junction Temperature
• Industrial
N-Channel MOSFET
Symbol
Symbol
T
D
S
R
J
R
V
V
E
I
I
P
, T
DM
I
AS
thJA
thJC
GS
DS
AS
D
D
®
stg
Power MOSFET
- 55 to 175
SUM110N04-03L
Limit
Limit
± 20
110
102
230
3.75
0.65
300
151
40
55
40
a
a
c
Vishay Siliconix
www.vishay.com
°C/W
RoHS*
COMPLIANT
Unit
Unit
mJ
°C
W
V
A
Available
1

Related parts for SUM110N04-03L-E3

SUM110N04-03L-E3 Summary of contents

Page 1

... 0.0053 4 TO-263 Top View Ordering Information: SUM110N04-03L SUM110N04-03L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy b Maximum Power Dissipation ...

Page 2

... SUM110N04-03L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... Document Number: 72081 S-62690-Rev. C, 01-Jan- 0.008 °C C 0.006 25 °C 125 °C 0.004 0.002 0.000 SUM110N04-03L Vishay Siliconix 250 200 150 100 T = 125 ˚ ˚ ˚ Gate-to-Source Voltage (V) GS Transfer Characteristics V = 4.5 V ...

Page 4

... SUM110N04-03L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.6 1.2 0.8 0.4 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ( 150 ° 0.1 0.00001 0.0001 0.001 t (Sec) in Typical Single Pulse Avalanche Current vs. Time www.vishay.com ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72081. Document Number: 72081 S-62690-Rev. C, 01-Jan-07 100 125 150 175 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUM110N04-03L Vishay Siliconix 1000 100 *Limited by r DS(on °C C Single Pulse 0.1 0.1 ...

Page 6

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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