SUM110N04-02L-E3 Vishay/Siliconix, SUM110N04-02L-E3 Datasheet - Page 5

• Manufacturer Part Number: SUM110N04-02L-E3
• Description: MOSFET 40V 110A 437.5W 2.3mohm @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SUM110N04-02L-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Resistance Drain-source Rds (on): 2.3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 120 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.75 W
• Rise Time: 80 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 155 ns

THERMAL RATINGS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see
Document Number: 70763
S-80108-Rev. D, 21-Jan-08
0.01
120
100
0.1
80
60
40
20
2
1
10
0
0
-4
0.2
http://www.vishay.com/ppg?70763.
Single Pulse
Duty Cycle = 0.5
Maximum Avalanche and Drain Current
25
0.02
0.05
T
C
vs. Case Temperature
0.1
50
– Ambient Temperature (°C)
75
100
10
Normalized Thermal Transient Impedance, Junction-to-Case
-3
125
150
Square Wave Pulse Duration (s)
175
10
-2
1000
100
0.1
10
1
0.1
* V
GS
V
minimum V
DS
Single Pulse
– Drain-to-Source Voltage (V)
Safe Operating Area
T
by r
C
Limited
1
= 25 °C
10
DS(on) *
SUM110N04-02L
GS
-1
at which r
Vishay Siliconix
DS(on)
10
is specified
www.vishay.com
10 µs
100 µs
1 ms
10 ms
100 ms
DC
100
1
5