SUM110N04-02L-E3 Vishay/Siliconix, SUM110N04-02L-E3 Datasheet - Page 3

• Manufacturer Part Number: SUM110N04-02L-E3
• Description: MOSFET 40V 110A 437.5W 2.3mohm @ 10V
• Manufacturer: Vishay/Siliconix

Specifications of SUM110N04-02L-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 110 A
• Resistance Drain-source Rds (on): 2.3 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: TO-263-3
• Fall Time: 120 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.75 W
• Rise Time: 80 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 155 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70763
S-80108-Rev. D, 21-Jan-08
12000
10000
8000
6000
4000
2000
300
250
200
150
100
250
200
150
100
50
50
0
0
0
0
0
0
C
rss
20
8
V
V
V
2
DS
GS
DS
Output Characteristics
C
Transconductance
= 10 thru 5 V
– Drain-to-Source Voltage (V)
I
– Drain-to-Source Voltage (V)
D
oss
40
– Drain Current (A)
Capacitance
16
4
60
C
iss
24
6
T
C
80
= - 55 °C
32
100
8
125 °C
25 °C
4 V
3 V
120
40
10
0.004
0.003
0.002
0.001
0.000
250
200
150
100
20
16
12
50
8
4
0
0
0
0
0
V
I
D
V
DS
GS
= 110 A
On-Resistance vs. Drain Current
20
= 30 V
60
= 4.5 V
1
V
GS
Transfer Characteristics
Q
g
I
– Gate-to-Source Voltage (V)
D
– Total Gate Charge (nC)
40
SUM110N04-02L
– Drain Current (A)
Gate Charge
120
2
V
25 °C
T
GS
C
60
Vishay Siliconix
= 125 °C
= 10 V
180
3
80
www.vishay.com
240
4
100
- 55 °C
120
300
5
3