BUK7230-55A /T3 NXP Semiconductors, BUK7230-55A /T3 Datasheet - Page 5

• Manufacturer Part Number: BUK7230-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7230-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Resistance Drain-source Rds (on): 0.03 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Fall Time: 43 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 88 W
• Rise Time: 68 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 83 ns
• Part # Aliases: BUK7230-55A,118

NXP Semiconductors
6. Characteristics
Table 6.
BUK7230-55A_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
I
I
V
V
V
V
V
and
V
and
I
V
see
V
R
measured from drain lead from package to
centre of die; T
measured from drain lead from package to
source bond pad
I
I
V
D
D
D
D
D
D
S
S
DS
DS
DS
DS
GS
GS
GS
DS
DS
G(ext)
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 25 A; V
= 25 A; V
= 25 A; dI
Figure 15
All information provided in this document is subject to legal disclaimers.
= 55 V; V
= 55 V; V
= 0 V; V
= 0 V; V
12
12
= 30 V; R
= 30 V; T
= 10 V; I
= 10 V; I
= 0 V; V
= 10 Ω; T
GS
DS
S
Rev. 02 — 16 March 2010
DS
DS
DS
GS
GS
DS
D
D
/dt = -100 A/µs; V
j
GS
GS
L
= 25 °C
= 25 A; T
= 25 A; T
= 44 V; V
= 0 V; T
j
= V
= V
= V
= 1.2 Ω; V
GS
GS
= 10 V; T
= -10 V; T
= 25 V; f = 1 MHz; T
= 25 °C
j
= 0 V; T
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
GS
GS
GS
; T
; T
; T
j
= 25 °C; see
j
j
j
j
j
GS
j
j
j
= 25 °C; see
= -55 °C; see
= 175 °C; see
= 175 °C; see
= 25 °C; see
j
GS
= 175 °C
= 25 °C
= 25 °C
j
j
= 25 °C
= 10 V; see
= 25 °C
= -55 °C
= 5 V;
GS
= -10 V;
j
N-channel TrenchMOS standard level FET
= 25 °C;
Figure 13
Figure 10
Figure 11
Figure 10
Figure 11
Figure 14
Figure 10
Min
55
50
2
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUK7230-55A
Typ
-
-
3
-
-
-
0.05
2
2
-
26
24
5
9
864
218
139
14
43
2.5
7.5
0.85
40
100
68
83
© NXP B.V. 2010. All rights reserved.
Max
-
-
4
4.4
-
500
10
100
100
60
30
-
-
-
1152
262
191
-
-
-
-
-
-
1.2
-
-
µA
nC
nC
pF
ns
nC
Unit
V
V
V
V
V
µA
nA
nA
mΩ
mΩ
nC
pF
pF
ns
ns
ns
nH
nH
V
ns
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