BUK7230-55A NXP Semiconductors, BUK7230-55A Datasheet
BUK7230-55A
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BUK7230-55A Summary of contents
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... BUK7230-55A N-channel TrenchMOS standard level FET Rev. 02 — 16 March 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... Ω sup °C; unclamped j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET Graphic symbol mb G mbb076 Min - - -20 and ...
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... I DSon δ All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET 120 der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03na49 μs 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7230-55A_2 Product data sheet Conditions see −5 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET Min Typ - - Figure 4 - 71.4 03na50 t p δ ...
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... /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET Min Typ Figure Figure Figure ...
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... V (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET 50 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values ...
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... GS Fig 10. Gate-source threshold voltage as a function of 03na47 100 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 2 ...
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... Fig 14. Turn-on gate charge characteristics; typical 1600 C (pF) 1200 C 800 C 400 C 0 −2 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET values 03na48 ...
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... min min 5.46 0.56 6.22 6.73 4.0 4.45 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET min 10.4 2.95 2.285 4.57 0.5 9.6 2.55 EUROPEAN PROJECTION SOT428 ...
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... BUK7230-55A_2 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product specification - All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A Supersedes BUK7230_55A-01 - © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 March 2010 BUK7230-55A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 March 2010 Document identifier: BUK7230-55A_2 ...