BUK7230-55A /T3 NXP Semiconductors, BUK7230-55A /T3 Datasheet - Page 2

• Manufacturer Part Number: BUK7230-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7230-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Resistance Drain-source Rds (on): 0.03 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Fall Time: 43 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 88 W
• Rise Time: 68 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 83 ns
• Part # Aliases: BUK7230-55A,118

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BUK7230-55A_2
Product data sheet
Pin
1
2
3
mb
Type number
BUK7230-55A
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Peak drain current is limited by chip, not package.
Symbol
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
Package
Name
DPAK
Description
gate
drain
source
mounting base; connected to
drain
Description
plastic single-ended surface-mounted package (DPAK); 3 leads (one
lead cropped)
Conditions
T
R
T
T
T
T
t
I
T
T
p
D
j
mb
mb
mb
mb
mb
j(init)
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 34 A; V
All information provided in this document is subject to legal disclaimers.
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 20 kΩ
= 25 °C; unclamped
sup
Rev. 02 — 16 March 2010
j
≤ 175 °C
p
GS
≤ 55 V; R
≤ 10 µs; pulsed; see
GS
Figure 2
= 5 V; see
= 5 V; see
mb
= 25 °C
Simplified outline
GS
= 50 Ω; V
Figure 1
Figure 1
SOT428 (DPAK)
1
Figure 3
N-channel TrenchMOS standard level FET
GS
and
mb
2
= 10 V;
3
3
[1]
BUK7230-55A
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
mbb076
G
© NXP B.V. 2010. All rights reserved.
Max
55
55
20
38
27
150
88
175
175
38
150
58
Version
SOT428
D
S
V
°C
°C
Unit
V
V
A
A
A
W
A
A
mJ
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