BUK7230-55A /T3 NXP Semiconductors, BUK7230-55A /T3 Datasheet - Page 4

• Manufacturer Part Number: BUK7230-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK7230-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 38 A
• Resistance Drain-source Rds (on): 0.03 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-428
• Fall Time: 43 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 88 W
• Rise Time: 68 ns
• Factory Pack Quantity: 2500
• Typical Turn-off Delay Time: 83 ns
• Part # Aliases: BUK7230-55A,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7230-55A_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
1
10
−6
0.02
0.2
0.5
0.05
0.1
Single Shot
10
−5
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 02 — 16 March 2010
10
−3
10
−2
Conditions
see
Figure 4
10
−1
N-channel TrenchMOS standard level FET
1
P
t
p
T
10
Min
-
-
BUK7230-55A
δ =
t
p
03na50
(s)
T
t
t
p
10
Typ
-
71.4
2
© NXP B.V. 2010. All rights reserved.
Max
1.7
-
K/W
Unit
K/W
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