BUK9609-55A /T3 NXP Semiconductors, BUK9609-55A /T3 Datasheet - Page 7

• Manufacturer Part Number: BUK9609-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9609-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 108 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 131 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 211 W
• Rise Time: 149 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 197 ns
• Part # Aliases: BUK9609-55A,118

NXP Semiconductors
BUK9609-55A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
10
I
10
10
10
10
10
D
D
300
200
100
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
10
5
4.8
2
1
min
4
4.6
4.4
4.2
4
3.8
3.6
3.4
3.2
3
2.8
2.6
2.4
2.2
typ
6
2
label is V
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
03aa36
V
GS
DS
(V)
03nh64
(V)
(V)
Rev. 02 — 3 February 2011
10
3
Fig 6.
Fig 8.
R
(mΩ)
DSon
g
(S)
fs
100
75
50
25
11
9
7
5
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
N-channel TrenchMOS logic level FET
20
5
BUK9609-55A
10
40
© NXP B.V. 2011. All rights reserved.
I
D
V
GS
(A)
03nh63
03nh61
(V)
15
60
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