BUK9609-55A /T3 NXP Semiconductors, BUK9609-55A /T3 Datasheet - Page 4

• Manufacturer Part Number: BUK9609-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9609-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 108 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 131 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 211 W
• Rise Time: 149 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 197 ns
• Part # Aliases: BUK9609-55A,118

NXP Semiconductors
BUK9609-55A
Product data sheet
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
D
10
10
10
1
3
2
1
capped at 75 A due to package
Limit R
DSon
All information provided in this document is subject to legal disclaimers.
= V
DS
/I
D
Rev. 02 — 3 February 2011
10
DC
N-channel TrenchMOS logic level FET
V
DS
(V)
t
100 μs
1 ms
10 ms
100 ms
p
= 10 μs
BUK9609-55A
03nh25
10
2
© NXP B.V. 2011. All rights reserved.
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