BUK9609-55A /T3 NXP Semiconductors, BUK9609-55A /T3 Datasheet - Page 11

• Manufacturer Part Number: BUK9609-55A /T3
• Description: MOSFET TAPE13 PWR-MOS
• Manufacturer: NXP Semiconductors

Specifications of BUK9609-55A /T3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 108 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 131 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 211 W
• Rise Time: 149 ns
• Factory Pack Quantity: 800
• Typical Turn-off Delay Time: 197 ns
• Part # Aliases: BUK9609-55A,118

NXP Semiconductors
8. Revision history
Table 7.
BUK9609-55A
Product data sheet
Document ID
BUK9609-55A v.2
Modifications:
BUK95_9609_55A v.1
Revision history
Release date
20110203
20020221
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9609-55A separated from data sheet BUK95_9609_55A v.1.
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 3 February 2011
Data sheet status
Product data sheet
Product data
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9609-55A
Supersedes
BUK95_9609_55A v.1
-
© NXP B.V. 2011. All rights reserved.
11 of 14